Plasmonic nanotechnology for photothermal applications – an evaluation

• A. R. Indhu,
• L. Keerthana and
• Gnanaprakash Dharmalingam

Beilstein J. Nanotechnol. 2023, 14, 380–419, doi:10.3762/bjnano.14.33

Numerical study on all-optical modulation characteristics of quantum cascade lasers

• Biao Wei,
• Haijun Zhou,
• Guangxiang Li and
• Bin Tang

Beilstein J. Nanotechnol. 2022, 13, 1011–1019, doi:10.3762/bjnano.13.88

• multiple nanostructures, which are grown by molecular beam epitaxy (MBE) [1]. It has been widely used in the fields of free space optical communication [2][3], gas detection [4][5], and biological research [6][7]. Because the QCL is a narrow linewidth and high-power laser working in the mid-infrared to

Self-assembly of C₆₀ on a ZnTPP/Fe(001)–p(1 × 1)O substrate: observation of a quasi-freestanding C₆₀ monolayer

• Guglielmo Albani,
• Michele Capra,
• Alessandro Lodesani,
• Alberto Calloni,
• Gianlorenzo Bussetti,
• Marco Finazzi,
• Franco Ciccacci,
• Alberto Brambilla,
• Lamberto Duò and
• Andrea Picone

Beilstein J. Nanotechnol. 2022, 13, 857–864, doi:10.3762/bjnano.13.76

• an ideal buffer layer for the growth of C60, which forms a compact film weakly coupled with the metallic substrate. Materials and Methods The experiments were performed in two ultrahigh vacuum (UHV) systems. Clean Fe(001) is obtained by deposition of a thick Fe film (500 nm) by molecular beam epitaxy

Ultrafast signatures of magnetic inhomogeneity in Pd_1−xFe_x (x ≤ 0.08) epitaxial thin films

• Andrey V. Petrov,
• Sergey I. Nikitin,
• Lenar R. Tagirov,
• Amir I. Gumarov,
• Igor V. Yanilkin and
• Roman V. Yusupov

Beilstein J. Nanotechnol. 2022, 13, 836–844, doi:10.3762/bjnano.13.74

• beam epitaxy (MBE). The films were 20 nm thick, continuous, and smooth monocrystalline layers. The MBE equipment provided uniformity of the film thickness within 3% on the 1″ lateral size. The film composition x was measured in situ using X-ray photoelectron spectroscopy (all from SPECS, Berlin) with a

• paramagnetic (PM) regions coexist, with the latter collapsing upon an increase of the iron content. Experimental The samples for the studies were thin epitaxial films of Pd1−xFex with a nominal iron content of x = 0 (pure Pd), 0.038, 0.062, and 0.080 grown on single-crystal MgO(001) substrates by molecular

9.1% efficient zinc oxide/silicon solar cells on a 50 μm thick Si absorber

• Rafal Pietruszka,
• Bartlomiej S. Witkowski,
• Monika Ozga,
• Katarzyna Gwozdz,
• Ewa Placzek-Popko and
• Marek Godlewski

Beilstein J. Nanotechnol. 2021, 12, 766–774, doi:10.3762/bjnano.12.60

• environmentally friendly solar cells are cells based on zinc oxide (ZnO). ZnO thin films can be obtained using many technologies, including molecular beam epitaxy, RF magnetron sputtering, pulsed laser deposition, chemical vapor deposition, and atomic layer deposition (ALD) [3]. ALD attracts the attention of many

A review of defect engineering, ion implantation, and nanofabrication using the helium ion microscope

• Frances I. Allen

Beilstein J. Nanotechnol. 2021, 12, 633–664, doi:10.3762/bjnano.12.52

Properties of graphene deposited on GaN nanowires: influence of nanowire roughness, self-induced nanogating and defects

• Jakub Kierdaszuk,
• Piotr Kaźmierczak,
• Justyna Grzonka,
• Aleksandra Krajewska,
• Aleksandra Przewłoka,
• Wawrzyniec Kaszub,
• Zbigniew R. Zytkiewicz,
• Marta Sobanska,
• Maria Kamińska,
• Andrzej Wysmołek and
• Aneta Drabińska

Beilstein J. Nanotechnol. 2021, 12, 566–577, doi:10.3762/bjnano.12.47

• the transfer onto NW substrates [31]. Therefore, we used stable orthogonal frames from polydimethylsiloxane (PDMS) polymer to stabilize the graphene during the transfer process [32]. The GaN NW substrates were fabricated by plasma-assisted molecular beam epitaxy (PAMBE) in N-rich conditions on (111

Spontaneous shape transition of Mn_xGe_1−x islands to long nanowires

• S. Javad Rezvani,
• Luc Favre,
• Gabriele Giuli,
• Yiming Wubulikasimu,
• Isabelle Berbezier,
• Augusto Marcelli,
• Luca Boarino and
• Nicola Pinto

Beilstein J. Nanotechnol. 2021, 12, 366–374, doi:10.3762/bjnano.12.30

• obtained via chemical methods [28][29] or via vapor–solid–liquid (VLS) and, less frequently, vapor–solid–solid (VSS) mechanisms. A metallic droplet (liquid or solid) acts as a catalyst, in chemical vapor deposition (CVD), or as a seed, in molecular beam epitaxy (MBE), for the NW growth [7][30][31]. By

Imaging and milling resolution of light ion beams from helium ion microscopy and FIBs driven by liquid metal alloy ion sources

• Nico Klingner,
• Gregor Hlawacek,
• Paul Mazarov,
• Wolfgang Pilz,
• Fabian Meyer and
• Lothar Bischoff

Beilstein J. Nanotechnol. 2020, 11, 1742–1749, doi:10.3762/bjnano.11.156

• mass-separated FIBs from a Co36Nd64 LMAIS to implant Co into Si at elevated temperatures, leading to metallic CoSi2 nanostructures down to 20 nm [13]. Ge nanowires could be grown by molecular beam epitaxy, via a vapor–liquid–solid process, on a Si substrate after formation of a regular seed array using

Self-assembly and spectroscopic fingerprints of photoactive pyrenyl tectons on hBN/Cu(111)

• Domenik M. Zimmermann,
• Knud Seufert,
• Luka Ðorđević,
• Tobias Hoh,
• Sushobhan Joshi,
• Tomas Marangoni,
• Davide Bonifazi and
• Willi Auwärter

Beilstein J. Nanotechnol. 2020, 11, 1470–1483, doi:10.3762/bjnano.11.130

• coverage of the pyrene modules was deposited by organic molecular beam epitaxy from thoroughly degassed quartz crucibles held at 450–500 K. During deposition, the Cu(111) surface was kept at rt, and the pressure remained below 2 × 10–9 mbar. The STM images were acquired in constant current mode, with the

Analysis of catalyst surface wetting: the early stage of epitaxial germanium nanowire growth

• Owen C. Ernst,
• Felix Lange,
• David Uebel,
• Thomas Teubner and
• Torsten Boeck

Beilstein J. Nanotechnol. 2020, 11, 1371–1380, doi:10.3762/bjnano.11.121

• wetting layer in between. The molecular beam epitaxy (MBE) experiments show that there is no material exchange between the gold droplets formed on the silicon oxide substrate. The data indicate a re-evaporation process at elevated temperatures, which is due to a temperature-induced overall reduction of

Electrochemical nanostructuring of (111) oriented GaAs crystals: from porous structures to nanowires

• Elena I. Monaico,
• Eduard V. Monaico,
• Veaceslav V. Ursaki,
• Shashank Honnali,
• Vitalie Postolache,
• Karin Leistner,
• Kornelius Nielsch and
• Ion M. Tiginyanu

Beilstein J. Nanotechnol. 2020, 11, 966–975, doi:10.3762/bjnano.11.81

• our GaAs nanowire detector working in the photoconductor mode is by a factor of 1.5 better than the value obtained recently on molecular beam epitaxy (MBE)-grown Si-doped GaAs nanowires with a carrier concentration of 1.47 × 1017 cm−3, working in the field-effect transistor (FET) mode at similar

Band tail state related photoluminescence and photoresponse of ZnMgO solid solution nanostructured films

• Vadim Morari,
• Aida Pantazi,
• Nicolai Curmei,
• Vitalie Postolache,
• Emil V. Rusu,
• Marius Enachescu,
• Ion M. Tiginyanu and
• Veaceslav V. Ursaki

Beilstein J. Nanotechnol. 2020, 11, 899–910, doi:10.3762/bjnano.11.75

• radio-frequency plasma-assisted molecular beam epitaxy (RF-MBE) [2][7][10][11], DC [12][13] and RF [1][3][6] magnetron sputtering, pulsed laser deposition (PLD) [14][15], plasma-enhanced atomic layer deposition (PE-ALD) [16], chemical vapor deposition (CVD) [17], metal–organic chemical vapor deposition

Epitaxial growth and superconducting properties of thin-film PdFe/VN and VN/PdFe bilayers on MgO(001) substrates

• Wael M. Mohammed,
• Igor V. Yanilkin,
• Amir I. Gumarov,
• Airat G. Kiiamov,
• Roman V. Yusupov and
• Lenar R. Tagirov

Beilstein J. Nanotechnol. 2020, 11, 807–813, doi:10.3762/bjnano.11.65

• analysis system. The VN layers were reactively magnetron sputtered from a metallic vanadium target in Ar/N2 plasma, while the Pd1−xFex layers were deposited by co-evaporation of metallic Pd and Fe pellets from calibrated effusion cells in a molecular beam epitaxy chamber. The VN stoichiometry and Pd1−xFex

• ]. Results and Discussion Sample preparation Single-crystalline MgO(001) (henceforth designated MgO) epi-polished substrates (CRYSTAL GmbH, Germany) with a size of 10 × 5 × 0.5 mm3 were annealed at 800 °C for 5 min in the ultrahigh vacuum (UHV) molecular beam epitaxy (MBE) chamber with a residual pressure

• , a0(MoN) = 416.3 pm. Conclusion Fully epitaxial single-crystalline thin films of VN and heteroepitaxial structures of Pd1−xFex/VN and VN/Pd1−xFex (x = 0.04, 0.08, respectively) were grown on single-crystalline MgO(001) substrates using a combination of UHV molecular beam epitaxy and magnetron

Electroluminescence and current–voltage measurements of single-(In,Ga)N/GaN-nanowire light-emitting diodes in a nanowire ensemble

• David van Treeck,
• Johannes Ledig,
• Gregor Scholz,
• Jonas Lähnemann,
• Mattia Musolino,
• Abbes Tahraoui,
• Oliver Brandt,
• Andreas Waag,
• Henning Riechert and
• Lutz Geelhaar

Beilstein J. Nanotechnol. 2019, 10, 1177–1187, doi:10.3762/bjnano.10.117

• ) behavior of single, freestanding (In,Ga)N/GaN nanowire (NW) light-emitting diodes (LEDs) in an unprocessed, self-assembled ensemble grown by molecular beam epitaxy. The data were acquired in a scanning electron microscope equipped with a micromanipulator and a luminescence detection system. Single NW

• . This information allows us to determine fairly accurately the current density in the NWs in the working ensemble LED, which is an important parameter for device analysis. Experimental The NW LED structures investigated in this work were grown by means of self-assembly processes with molecular beam

• epitaxy (MBE) on an n-doped Si(111) substrate. They consist of an intrinsic multiple quantum-well structure grown on a Si-doped n-GaN base of about 600 nm length. The active region is composed of four (In,Ga)N insertions with an In content of (20 ± 10)% and a thickness of 3 ± 1 nm. The insertions are

CuInSe₂ quantum dots grown by molecular beam epitaxy on amorphous SiO₂ surfaces

• Henrique Limborço,
• Pedro M.P. Salomé,
• Rodrigo Ribeiro-Andrade,
• Jennifer P. Teixeira,
• Nicoleta Nicoara,
• Kamal Abderrafi,
• Joaquim P. Leitão,
• Juan C. Gonzalez and
• Sascha Sadewasser

Beilstein J. Nanotechnol. 2019, 10, 1103–1111, doi:10.3762/bjnano.10.110

• preparation The samples presented in this work were grown in a molecular beam epitaxy system (Omicron EVO 50) by evaporating high-purity solid precursors. Nanodots were grown on Si(100) with an approximately 1.6 nm thick layer of native SiO2. The substrates were outgassed at 600 °C for 10 min before the

Direct observation of the CVD growth of monolayer MoS₂ using in situ optical spectroscopy

• Claudia Beatriz López-Posadas,
• Yaxu Wei,
• Wanfu Shen,
• Daniel Kahr,
• Michael Hohage and
• Lidong Sun

Beilstein J. Nanotechnol. 2019, 10, 557–564, doi:10.3762/bjnano.10.57

• synthesizing large-area 2D TMDCs have been reported, including mechanical exfoliation, sulphurization of metal thin films, mass transport, molecular beam epitaxy (MBE) and chemical vapor deposition (CVD) [6][7]. In particular, CVD is considered to be an attractive and very promising approach for large-scale

• the optical properties of 2D TMDCs [2][20] and, most recently, also to monitor the molecular beam epitaxy of monolayer MoSe2 on sapphire substrates [27]. In the current work, we have applied an analogous technology, namely, differential transmittance spectroscopy (DTS), to realize the in situ real

Interaction of Te and Se interlayers with Ag or Au nanofilms in sandwich structures

• Arkadiusz Ciesielski,
• Lukasz Skowronski,
• Marek Trzcinski,
• Ewa Górecka,
• Wojciech Pacuski and
• Tomasz Szoplik

Beilstein J. Nanotechnol. 2019, 10, 238–246, doi:10.3762/bjnano.10.22

• chamber molecular beam epitaxy (MBE) system delivered by SVT Associates. The substrates were kept at room temperature. The background pressure was below 5 × 10−10 Torr. The purity of sublimated ingots for both Te and Se was 7N. To avoid cross-contamination during the deposition of Te or Se only one

Variation of the photoluminescence spectrum of InAs/GaAs heterostructures grown by ion-beam deposition

• Alexander S. Pashchenko,
• Leonid S. Lunin,
• Eleonora M. Danilina and
• Sergei N. Chebotarev

Beilstein J. Nanotechnol. 2018, 9, 2794–2801, doi:10.3762/bjnano.9.261

• (λ = 0.154 nm). A Renishaw InVia Raman spectrometer was used for Raman investigations. Results and Discussion Photoluminescence properties of InAs/GaAs heterointerfaces The photoluminescence properties of vertically stacked QD arrays grown by using molecular beam epitaxy (MBE) are well studied in [24

Silicene, germanene and other group IV 2D materials

• Patrick Vogt

Beilstein J. Nanotechnol. 2018, 9, 2665–2667, doi:10.3762/bjnano.9.248

• beam epitaxy (MBE) [1][2] and at around the same time on zirconium diboride thin films grown on Si(111) substrates by Si segregation through the film [3]. The synthesis of silicene further launched an intensive search for other 2D elemental materials synthesized under ultrahigh vacuum by MBE-like

• concepts exploiting their topological properties. In recent years this search has lead to the discovery of other members of this family of 2D materials based on other group IV elements. In 2012 silicene was first synthesized under ultrahigh vacuum conditions on a silver(111) single crystal by Si molecular

High-temperature magnetism and microstructure of a semiconducting ferromagnetic (GaSb)_1−x(MnSb)_x alloy

• Leonid N. Oveshnikov,
• Elena I. Nekhaeva,
• Alexey V. Kochura,
• Alexander B. Davydov,
• Mikhail A. Shakhov,
• Sergey F. Marenkin,
• Oleg A. Novodvorskii,
• Alexander P. Kuzmenko,
• Alexander L. Vasiliev,
• Boris A. Aronzon and
• Erkki Lahderanta

Beilstein J. Nanotechnol. 2018, 9, 2457–2465, doi:10.3762/bjnano.9.230

• of conducting holes [1][3]. To reach high values of the Curie temperature, Tc, materials with high Mn concentration are required, which can be achieved by using non-equilibrium growth methods, such as low-temperature molecular-beam epitaxy. Thus, the solubility limit of Mn in Ga1−xMnxAs can be

Metal–dielectric hybrid nanoantennas for efficient frequency conversion at the anapole mode

• Valerio F. Gili,
• Lavinia Ghirardini,
• Davide Rocco,
• Giuseppe Marino,
• Ivan Favero,
• Iännis Roland,
• Giovanni Pellegrini,
• Lamberto Duò,
• Marco Finazzi,
• Luca Carletti,
• Andrea Locatelli,
• Aristide Lemaître,
• Dragomir Neshev,
• Costantino De Angelis,
• Giuseppe Leo and
• Michele Celebrano

Beilstein J. Nanotechnol. 2018, 9, 2306–2314, doi:10.3762/bjnano.9.215

• The samples are grown by molecular beam epitaxy from a (100) non-intentionally doped GaAs substrate. At the end of the process, 400 nm of Al0.18Ga0.82As rest on a 1 μm Al0.98Ga0.02As sacrificial layer, which will be selectively oxidized at a later stage to achieve a low-index AlOx substrate. 3 nm of

Combined pulsed laser deposition and non-contact atomic force microscopy system for studies of insulator metal oxide thin films

• Daiki Katsube,
• Hayato Yamashita,
• Satoshi Abo and
• Masayuki Abe

Beilstein J. Nanotechnol. 2018, 9, 686–692, doi:10.3762/bjnano.9.63

• resolution in recent studies [35][37]. Difficulties with this method are a long preparation time and a low reproducibility. Recently, connecting an STM with a pulsed laser deposition (PLD) system [13][27][28] or with molecular beam epitaxy [18] has increased the types of measurements possible. Such combined

Dopant-stimulated growth of GaN nanotube-like nanostructures on Si(111) by molecular beam epitaxy

• Alexey D. Bolshakov,
• Alexey M. Mozharov,
• Georgiy A. Sapunov,
• Igor V. Shtrom,
• Nickolay V. Sibirev,
• Vladimir V. Fedorov,
• Evgeniy V. Ubyivovk,
• Maria Tchernycheva,
• George E. Cirlin and
• Ivan S. Mukhin

Beilstein J. Nanotechnol. 2018, 9, 146–154, doi:10.3762/bjnano.9.17

• thin AlN layer grown by means of plasma-assisted molecular beam epitaxy. In the first part of our study we investigate the influence of the growth parameters on the geometrical properties of the GaN NW arrays. First, we find that the annealing procedure carried out prior to deposition of the AlN buffer

• molecular beam epitaxy are attracting a lot of interest due to their prospective use as basic elements for new generation optoelectronic devices [1][2]. The most important properties of these structures in terms of potential device applications are high crystal quality and efficient light emission [3][4

• ) formation of a GaN shell over the NW template (e.g., ZnO) followed by the template NW removal [14]; 3) selective area molecular beam epitaxy (MBE) growth of GaN on sapphire (111) substrates over titanium mask [15]; and 4) MBE deposition of GaN on Si(111) substrates covered by a silicon oxide layer in the

Substrate and Mg doping effects in GaAs nanowires

• Perumal Kannappan,
• Nabiha Ben Sedrine,
• Jennifer P. Teixeira,
• Maria R. Soares,
• Bruno P. Falcão,
• Maria R. Correia,
• Nestor Cifuentes,
• Emilson R. Viana,
• Marcus V. B. Moreira,
• Geraldo M. Ribeiro,
• Alfredo G. de Oliveira,
• Juan C. González and
• Joaquim P. Leitão

Beilstein J. Nanotechnol. 2017, 8, 2126–2138, doi:10.3762/bjnano.8.212

• grown by molecular beam epitaxy (MBE) on GaAs(111)B and Si(111) substrates. In this work, we address this topic and present further understanding on the fundamental aspects. As the Mg doping was increased, structural and optical investigations revealed: i) a lower influence of the polytypic nature of

• [23][24]. Be has been the main choice to produce p-type GaAs layers and nanowires grown by molecular beam epitaxy (MBE) [25][26][27][28]. However, severe drawbacks like segregation at high concentration, a large diffusion coefficient prohibiting abrupt doping profiles and high toxicity have motivated